Ag M4,5N4,5N4,5 Auger lineshape variation during the epitaxial growth of Ag onto GaAs 001
نویسندگان
چکیده
We report on the Ag M4,5N4,5N4,5 Auger lineshape variation which occurs during the epitaxial growth of Ag onto GaAs { 001 } layers grown in situ by MBE (molecular beam epitaxy). This variation depends strongly on the mode of growth of the metallic layer. We suggest that it is due to a solid-state effect which acts progressively in the case of a layer-by-layer (2 D) growth and more rapidly when the growth involves the formation of 3 D clusters. J. Physique 43 (1982) 939-944 JUIN 1982,
منابع مشابه
Epitaxial growth of GaAs by solid-phase transport
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